@article{ijp2017542,
author={{Ibrahim, Abdulmajeed E. and Aadim, Kadhem A. and Abduljabbar, Qutaibah A.},
title={Annealing Effect on (SnO<SUB>2</SUB>)<SUB>0.3</SUB>:(In<SUB>2</SUB>O<SUB>3</SUB>)<SUB>0.7</SUB><SUB> </SUB>Solar Cell Prepared by PLD Technique},
journal={International Journal of Physics},
volume={5},
number={4},
pages={110--115},
year={2017},
url={http://pubs.sciepub.com/ijp/5/4/2},
issn={2333-4576},
abstract={Indium tin oxide (ITO) thin films were produced by Q- switched Nd:YAG laser with wavelength (1064 nm) has 800 mJ peak energy on In<SUB>2</SUB>O<SUB>3 </SUB>:SnO<SUB>2 </SUB>target with 0.3 ratio on p-type Si and on porous Si to fabricated solar cell. The as deposited and annealed thin films on glass substrates were characterized by X-ray diffraction Atomic force microscopy (AFM), UV-visible absorbance and Hall effect measurements. Then the fabricated solar cells examined in the dark and under illumination for SnO<SUB>2</SUB>:In<SUB>2</SUB>O<SUB>3</SUB> /p-Si and SnO<SUB>2</SUB>:In<SUB>2</SUB>O<SUB>3</SUB>/Psi/p-Si annealed and as deposited samples.},
doi={10.12691/ijp-5-4-2}
publisher={Science and Education Publishing}
}