eng Science and Education Publishing International Journal of Physics 2333-4576 2017-06-27 5 4 110 115 10.12691/ijp-5-4-2 IJP2017542 article Abdulmajeed E. Ibrahim 1 Kadhem A. Aadim 2 Qutaibah A. Abduljabbar qutaibahalrawi5378@gmail.com 2 Department of Physics, University of Tikrit/College of Education Department of Physics, University of Baghdad / College of Sciences Indium tin oxide (ITO) thin films were produced by Q- switched Nd:YAG laser with wavelength (1064 nm) has 800 mJ peak energy on In2O3 :SnO2 target with 0.3 ratio on p-type Si and on porous Si to fabricated solar cell. The as deposited and annealed thin films on glass substrates were characterized by X-ray diffraction Atomic force microscopy (AFM), UV-visible absorbance and Hall effect measurements. Then the fabricated solar cells examined in the dark and under illumination for SnO2:In2O3 /p-Si and SnO2:In2O3/Psi/p-Si annealed and as deposited samples. http://pubs.sciepub.com/ijp/5/4/2/ijp-5-4-2.pdf solar cell pulse laser porous-Si