@article{ijp2017533,
author={Ali, Abdul Kareem D.},
title={Photovoltaic Properties of Pb(Zr<SUB>x</SUB>,Ti<SUB>1-x</SUB>)O<SUB>3</SUB> /n-Si and Pb(Zr<SUB>x</SUB>,Ti<SUB>1-x</SUB>)O<SUB>3</SUB> /n-PS Hetero junction Solar Cell},
journal={International Journal of Physics},
volume={5},
number={3},
pages={82--86},
year={2017},
url={http://pubs.sciepub.com/ijp/5/3/3},
issn={2333-4576},
abstract={Fabrication Pb(Zr<SUB>x</SUB>,Ti<SUB>1-x</SUB>)O<SUB>3</SUB> /n-Si and Pb(Zr<SUB>x</SUB>,Ti<SUB>1-x</SUB>)O<SUB>3</SUB> /n-PS Hetero junction as a<b> </b>Solar Cell by deposited<b> </b>Pb(Zr<SUB>x</SUB>,Ti<SUB>1-x</SUB>)O<SUB>3</SUB> (PZT) thin films with various content of Zr (x=0.1, 0.3, 0.5, 0.7, 0.9) on n- type Silicon (/n-Si) and on Porous Silicon (/PS) respectively by pulsed laser deposition technique to investigate the ideality factor and the efficiency in these devices. The films were deposited at room temperature. The ideality factor decreases with the increasing of Zr concentration. The efficiency increases with the increasing of Zr content to reach the highest value of Pb(Zr<SUB>x</SUB>,Ti<SUB>1-x</SUB>)O<SUB>3</SUB> /n-Si and for Pb(Zr<SUB>x</SUB>,Ti<SUB>1-x</SUB>)O<SUB>3</SUB> /n-PS at x=0.5 and then decreases.<b> </b>The devices were enhanced and gained larger efficiency with porous silicon.},
doi={10.12691/ijp-5-3-3}
publisher={Science and Education Publishing}
}