eng Science and Education Publishing International Journal of Physics 2333-4886 2014-08-08 2 4 109 111 10.12691/ijp-2-4-3 IJP2014243 article A. Benahmed moumenephysique@yahoo.fr 1 A. Aissat 1 2 M. A. Benammar 2 Faculty of the Sciences, FUNDAPL Laboratory, University of Blida.1, Algeria The analysis of the electronic states of a quantum dot of InAs grown on a GaAs substrate has been studied for different geometries. We did the calculation with each type of geometry we based on the Schrödinger equation for stationary particle and we used "Comsol" for calculations. We calculated energy values as a function of each of the parameters: length, width and thickness of the wetting layer where other parameters are held constant. http://pubs.sciepub.com/ijp/2/4/3/ijp-2-4-3.pdf hétérostructure InAs / GaAs the Schrödinger equation simulation COMSOL