@article{ijp20241251,
author={{Serge, Tchouadep Guy and Tchedre, Kp¨¦li Esso Ehanam and Boubacar, Soro and Patrice, Compaore Wendlassida and Issa, Zerbo and Martial, Zoungrana},
title={Effect of Low Energy Electrons Radiation on the Series Resistance, Shunt Resistance and Capacitance of an Illuminated PV Silicon Solar Cell},
journal={International Journal of Physics},
volume={12},
number={5},
pages={196--201},
year={2024},
url={https://pubs.sciepub.com/ijp/12/5/1},
issn={2333-4576},
abstract={Some important factors affecting the photoelectric conversion efficiency of solar cells consists of shunt resistance (<img src=image/abs1.png></img>), series resistance (<img src=image/abs2.png></img>) and capacitance (<img src=image/abs3.png></img>). In order to improve the performance of silicon solar cell, it is essential either to characterize these parameters or to modify them by using external factors during the operation of the solar cell. In this work we investigate theoretically the behavior of shunt resistance, series resistance and capacitance when illuminated silicon solar cell is irradiated with low energy electrons emitted from Pm-147. By varying the fluence of incident particles up to the value of 3.10<SUP>10 </SUP>cm<SUP>-2</SUP> we observed an increase in capacitance and a decrease in shunt resistance and series resistance which induces an improvement in the performance of the solar cell. It appeared that the illuminated PV cell in steady state irradiated by low energy electrons behaves like a PV cell in the absence of irradiation but whose electrical parameters vary depending on the fluence of incident particles.},
doi={10.12691/ijp-12-5-1}
publisher={Science and Education Publishing}
}