@article{ajst2013111,
author={{Islam, Md. Earul and Julkarnain, Md. and Hossain, Jaker and Ismail, Abu Bakar Md. and Rahman, Md. Hafijur},
title={Investigation on LaF<SUB>3</SUB>-Impregnated Porous Silicon Heterostructur as Potentionmetric Sensor for Fluoride Ion in Aqueous Medium},
journal={American Journal of Sensor Technology},
volume={1},
number={1},
pages={1--4},
year={2013},
url={http://pubs.sciepub.com/ajst/1/1/1},
abstract={Impregnation of pores of porous silicon (PS) by Lanthanum Fluoride (LaF<SUB>3</SUB>) using a novel one-step chemical bath technique, and application of the LaF<SUB>3</SUB>-impregnated porous silicon (PS) structure (LaF<SUB>3</SUB>/PS) as a potentiometric fluoride ion sensor have been investigated in this article. The impregnation of LaF<SUB>3</SUB> inside the pores of porous silicon was achieved using a chemical bath technique developed by this group. The Scanning Electron Microscopy (SEM) and EDX on the cross-section of LaF<SUB>3</SUB>/PS/Si structure confirmed the LaF<SUB>3</SUB> film deposition inside the pores of PS. The heterostructure of LaF<SUB>3</SUB>/PS/Si was investigated as fluoride ion (F<SUP>-</SUP>) sensor in aqueous medium. The high specific area of PS was taken as the key subject to investigate the high fluoride sensitivity of the LaF<SUB>3</SUB>/PS structure in aqueous medium. When experimented with home made fluoride solution having various concentrations the annealed LaF<SUB>3</SUB>/PS/Si structure was found to detect the fluoride ion in aqueous solution. Its response was found linear in the fluoride concentration range of 2.28~4.28 pF. As capacitive sensor the overall fluoride sensitivity was found to be over-Nernstian (400 mV/pF). The experimental results indicate that LaF<SUB>3</SUB>-impregnated porous silicon structure (LaF<SUB>3</SUB>/PS) can be used as a high-sensitive fluoride-ion sensor in aqueous medium.},
doi={10.12691/ajst-1-1-1}
publisher={Science and Education Publishing}
}