@article{ajmse2016421,
author={{Talla, K. and Sakho, O. and Tall, P. D. and Ndao, C. B. and Gueye, E. H. O. and Gaye, M. B. and Dangbegnon, J. K. and Ngom, B. D. and Botha, J. R. and Beye, A. C.},
title={Influence of Growth Parameters on the Structural, Morphological and optical Properties of Mg<SUB>x</SUB>Zn<SUB>1-x</SUB>O Prepared by Metal Organic Chemical Vapor Deposition},
journal={American Journal of Materials Science and Engineering},
volume={4},
number={2},
pages={20--25},
year={2016},
url={http://pubs.sciepub.com/ajmse/4/2/1},
issn={2333-4673},
abstract={The influence of growth parameters on the structural, morphological and optical properties of Mg<SUB>x</SUB>Zn<SUB>1-x</SUB>O grown on sapphire substrate by metal organic chemical vapor deposition is studied. Pure oxygen gas is used as oxidant, bis-methyl-cyclopentadienyl magnesium ((MeCp)<SUB>2</SUB>Mg) and diethyl zinc are used as Mg and Zn source, respectively. The growth temperature between and 320ˇăC and 620ˇăC, the VI/II (O/Mg, Zn) ratio ranging from 60 to 960 and the growth rate from 0.5 to 3.3 ?m/h, are systematically varied to determine their effects upon the above mentioned physical properties. Structural, morphological and optical properties of the thin films are characterized by means of X-Ray Diffraction (XRD), Scanning Electron?Microscope (SEM) and Photoluminescence (PL). Experimental results indicate that the growth conditions are essential for engineering the growth of Mg<SUB>x</SUB>Zn<SUB>1-x</SUB>O. The optimum substrate temperature is found to be 420ˇăC for the growth of Mg<SUB>x</SUB>Zn<SUB>1-x</SUB>O with a solid composition x below 30%, composition above which a phase segregation has been previously observed. With increasing temperature, strong parasitic reaction between (MeCp)<SUB>2</SUB>Mg and oxygen is found to occur before they rich the substrate.},
doi={10.12691/ajmse-4-2-1}
publisher={Science and Education Publishing}
}