eng Science and Education Publishing American Journal of Materials Science and Engineering 2333-4673 2014-04-27 2 2 13 17 10.12691/ajmse-2-2-1 AJMSE2014221 article D.K. Dwivedi todkdwivedi@gmail.com 1 Nitesh Shukla 1 H.P. Pathak 1 Kedar Singh 2 Amorphous Semiconductor Research Lab, Department of Physics, Madan Mohan Malaviya University of Technology, Gorakhpur Department of Physics, Banaras Hindu University, Varanasi Se90Cd10-xInx (x=2,4,6 &8) thin films have been deposited onto a chemically cleaned glass substrate by thermal evaporation technique under vacuum. The effects of different doping concentration of In have been investigated X-ray diffraction technique has been employed to investigate the structural characterization of the films. X-ray diffraction measurement indicates that the Se90Cd10-xInx films possess polycrystalline structure. Absorption spectra measured at normal incidence in the wavelength range 400-1100 nm have been analyzed for the optical characterization of the thin films under consideration. The optical constants (absorption coefficient (α), extinction coefficient (k)) and optical band gap Eg have been calculated. The absorption coefficient (α) is found to increase with photon energy. It has been found that extinction coefficient (K) decreases with increase in wavelength (λ). Optical band gap (Eg) has also been evaluated for the Se90Cd10-xInx thin films with different compositions. It has been found that optical band gap (Eg) increases with In incorporation in Se90Cd10-xInx alloys. http://pubs.sciepub.com/ajmse/2/2/1/ajmse-2-2-1.pdf Chalcogenide glasses amorphous semiconductors thin films optical properties optical band gap