@article{ajer2018615,
author={{Niane, Djimba and Ehemba, Alain K. and Ciss¨¦, Salif and Diagne, Ousmane and Dieng, Moustapha},
title={Influence of the Doping Rate of the CIGSe Layer on the Recombination-generation Mechanisms with 25 nm Incorporation of a KF Layer on a CIGSe Solar Cell},
journal={American Journal of Energy Research},
volume={6},
number={1},
pages={30--34},
year={2018},
url={http://pubs.sciepub.com/ajer/6/1/5},
issn={2328-7330},
abstract={In this work, we studied the influence of the doping rate of the CIGSe layer on the recombination-generation mechanisms with 25 nm incorporation of a KF layer on a CIGSe solar cell. The different doping taken are <i>N</i><SUB><i>b</i></SUB>=10<SUP>15</SUP><i>cm</i><SUP>-3</SUP>, <i>N</i><SUB><i>b</i></SUB><i>=</i>10<SUP>16</SUP><i>cm</i><SUP>-3</SUP> et <i>N</i><SUB><i>b</i></SUB><i>=</i>10<SUP>17</SUP><i>cm</i><SUP>-3</SUP>. Numerical modeling with the SCAPS-1D software shows that the generation rate varies slightly while that of recombination is very important, explained by a strong presence of traps in the CIGSe bandgap.},
doi={10.12691/ajer-6-1-5}
publisher={Science and Education Publishing}
}