eng Science and Education Publishing American Journal of Energy Research 2328-7330 2018-07-19 6 1 30 34 10.12691/ajer-6-1-5 AJER2018615 article Djimba Niane djimbasbn@gmail.com 1 Alain K. Ehemba 1 Salif Cissé 1 Ousmane Diagne 1 Moustapha Dieng 1 Physics Department, Faculty of Science and Technology, Laboratory of Semiconductors and Solar Energy, University Cheikh Anta Diop, Dakar In this work, we studied the influence of the doping rate of the CIGSe layer on the recombination-generation mechanisms with 25 nm incorporation of a KF layer on a CIGSe solar cell. The different doping taken are Nb=1015cm-3, Nb=1016cm-3 et Nb=1017cm-3. Numerical modeling with the SCAPS-1D software shows that the generation rate varies slightly while that of recombination is very important, explained by a strong presence of traps in the CIGSe bandgap. http://pubs.sciepub.com/ajer/6/1/5/ajer-6-1-5.pdf Solar cells CIGSe KF Doping Generation Recombination SCAPS-1D