@article{ajer2018614,
author={{Diagne, Ousmane and Niane, Djimba and Ehemba, Alain Kassine and Soce, Mouhamadou Mamour and Dieng, Moustapha},
title={Impact of the Geometry Profil of the Bandgap of the CIGS Absorber Layer on the Electrical Performance of the Thin-film Photocell},
journal={American Journal of Energy Research},
volume={6},
number={1},
pages={23--29},
year={2018},
url={http://pubs.sciepub.com/ajer/6/1/4},
issn={2328-7330},
abstract={We carried out, through the SCAPS-1D simulator, the survey of the curves of spectral response and J/V characteristic for different parabolic bandgap profile CIGS solar cells. The variable parameter for these different samples is the gallium rate of the CIGS absorber layer. The theoretical model coincides with the one-dimensional model of a heterojunction consisting of a window layer (ZnS), a buffer layer (CdS) and an absorbing layer (Cu(In,Ga)Se?). The analysis of the results obtained allowed us to identify and evaluate the adjustments that would have to be made, compared to the gallium composition, in order to have an optimal efficiency. Thus, after various adjustments, we obtain a powerful cell that displays a conversion efficiency of around 23.68%. This cell is characterized by a bowing factor (b) equal to 10% and Ga local composition rates equal to 25% and 35% respectively at the junction and the back contact.},
doi={10.12691/ajer-6-1-4}
publisher={Science and Education Publishing}
}