@article{ajeee2013131,
author={{Heydarzadeh, Siavash and Torkzadeh, Pooya},
title={1 GHz CMOS Band-pass Filter Design Using an Active Inductor and Capacitor},
journal={American Journal of Electrical and Electronic Engineering},
volume={1},
number={3},
pages={37--41},
year={2013},
url={http://pubs.sciepub.com/ajeee/1/3/1},
issn={2328-7357},
abstract={This work offers the use of an active inductor and capacitor to build RF band-pass filter with 0.18¦Ìm and TSMC process. Based on the proposed structure, a prototype 1 GHz active filter designed and simulated in a 0.18¦Ìm CMOS technology. Simulation results for the designed RF band-pass filter show S21 > 19dB and consuming power less than 14 mW from 1.8 V supply voltage. The absolute values of reflection parameters (|S11| and |S22|) are about 60 dB. Low-bandwidth linear noise at output node are less than -170 dB and Advanced Design System (ADS) used to produce 1 GHz band-pass active filter simulation results.},
doi={10.12691/ajeee-1-3-1}
publisher={Science and Education Publishing}
}