Currrent Issue: Volume 3, Number 1, 2015


Article

Analysis of Strained Al0.15In0.22Ga0.63As/GaAs Graded Index–Separate Confinement Lasing Nano-heterostructure

1Department of Electronics, Banasthali Vidyapith, Rajasthan, India

2Department of Physics, Banasthali Vidyapith, Rajasthan, India

3Department of Physics, Aligarh Muslim University, Aligarh, U.P., India


Journal of Optoelectronics Engineering. 2015, 3(1), 1-6
doi: 10.12691/joe-3-1-1
Copyright © 2015 Science and Education Publishing

Cite this paper:
Swati Jha, Meha Sharma, H. K. Nirmal, Pyare Lal, F. Rahman, P. A. Alvi. Analysis of Strained Al0.15In0.22Ga0.63As/GaAs Graded Index–Separate Confinement Lasing Nano-heterostructure. Journal of Optoelectronics Engineering. 2015; 3(1):1-6. doi: 10.12691/joe-3-1-1.

Correspondence to: P.  A. Alvi, Department of Physics, Banasthali Vidyapith, Rajasthan, India. Email: drpaalvi@gmail.com

Abstract

The paper deals with a theoretical insight into the various characteristics of a 0.89 μm Al0.15In0.22Ga0.63As/GaAs strained single quantum well based Graded Index (GRIN) - separate confinement lasing nano-heterostructure. Major emphasis has been laid on the optical and modal gain. Both these gain have been simulated with respect to lasing wavelength, photon energy and current density. In this paper, we have also drawn a comparative picture of the two polarization modes i.e Transverse Electric (TE) and Transverse Magnetic (TM). The maximum optical gain has been observed to be 5557.18 cm-1 at the lasing wavelength ~ 0.90 μm and photonic energy ~ 1.36 eV in TE mode and it is only 2760.70 cm-1 at the lasing wavelength ~ 0.78 μm and at photonic energy ~ 1.58 eV in TM mode. However, the maximum modal gain has been observed to be 54.65 cm-1 in TE mode and it is 27.16 cm-1 in TM mode at the same lasing wavelengths and photonic energies respectively at 298 K. The behavior of quasi Fermi levels for the conduction band and valence band has also been studied. Other important parameters like gain compression, differential gain and refractive index profile have also been simulated with respect to carrier density. Anti-guiding factor has been plotted against current density to observe its behavior in order to support the explanation of optical gain simulated.

Keywords

References

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