American Journal of Nanomaterials
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American Journal of Nanomaterials. 2020, 8(1), 32-47
DOI: 10.12691/ajn-8-1-4
Open AccessReview Article

Review of GaN Nanowires Based Sensors

Ahmed M. Nahhas1,

1Department of Electrical Engineering, Faculty of Engineering and Islamic Architecture, Umm Al Qura University, Makkah, Saudi Arabia

Pub. Date: August 19, 2020

Cite this paper:
Ahmed M. Nahhas. Review of GaN Nanowires Based Sensors. American Journal of Nanomaterials. 2020; 8(1):32-47. doi: 10.12691/ajn-8-1-4

Abstract

This paper presents a review of the recent advances of GaN based nanowires sensors. GaN has gained substantial interest in the research area of wide band gap semiconductors due to its unique electrical, optical and structural properties. GaN nanostructured material exhibits many advantages for nanodevices due to its higher surface-to-volume ratio as compared to thin films. GaN nanostructured material has the ability to absorb ultraviolet (UV) radiation and useful in many optical applications. Recently, GaN nanostructured based devices have gained much attention due to their various potential applications specially in nanowires sensors. GaN nanowires sensors have been used in many devices such as gas sensors, biosensors, and pressure sensors. The recent aspects of GaN based nanowires sensors are presented and discussed. The performance of several sensors based devices which have been demonstrated on GaN is reviewed. The structural, electrical, and optical properties are also reviewed.

Keywords:
gallium nitride (GaN) nanostructured doping nanowires sensors ultraviolet (UV)

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