Journal of Materials Physics and Chemistry
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Journal of Materials Physics and Chemistry. 2015, 3(1), 6-10
DOI: 10.12691/jmpc-3-1-2
Open AccessArticle

Electronic Properties of Bonds in AIBIIICVI2 Chalcopyrite Semiconductors

D S Yadav1,

1Department of Physics, Ch. Charan Singh P G College Heonra (Saifai) Etawah-206001 (U.P.) India

Pub. Date: May 29, 2015

Cite this paper:
D S Yadav. Electronic Properties of Bonds in AIBIIICVI2 Chalcopyrite Semiconductors. Journal of Materials Physics and Chemistry. 2015; 3(1):6-10. doi: 10.12691/jmpc-3-1-2

Abstract

In this paper a new approach utilizing the concept of plasma oscillations theory of solids has been applied to investigate the electronic properties such as homopolar gap (Eh), heteropolar or ionic gap (Ec), average energy gap (Eg), bond ionicity (fi) and electronic susceptibility (χe) for the chemical bonds (A-C and B-C) in complex structured AIBIIICVI2 ternary chalcopyrite crystals. We have presented the expressions relating the electronic properties for these chalcopyrite crystals with plasmon energy (ћωp). The homopolar gap (Eh), heteropolar gap (Ec), average energy gap (Eg), bond ionicity (fi) and electronic susceptibility (χe) of the bonds in these semiconductors exhibit a linear relationship when plotted on a log-log scale against the valence electron plasmon energy, which lies on the straight line. The calculated values of Eh, Ec, Eg, fi and χe have been compared with the available theoretical values reported by several workers so far. A fairly good agreement has been obtained between them.

Keywords:
A. Ternary chalcopyrites D. Electronic properties D. Optical properties

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