International Journal of Physics
ISSN (Print): 2333-4568 ISSN (Online): 2333-4576 Website: Editor-in-chief: B.D. Indu
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International Journal of Physics. 2017, 5(4), 116-120
DOI: 10.12691/ijp-5-4-3
Open AccessArticle

Optical and Electrical Properties of (SnO2)X(In2O3)1-X thin Films Prepared by Pulse Laser Deposition Technique

Kadhem A. Aadim1, Abdulmajeed E. Ibrahim2 and Qutaibah A. Abduljabbar2,

1Department of Physics, University of Baghdad / College of Sciences

2Department of Physics, University of Tikrit/College of Education

Pub. Date: June 23, 2017

Cite this paper:
Kadhem A. Aadim, Abdulmajeed E. Ibrahim and Qutaibah A. Abduljabbar. Optical and Electrical Properties of (SnO2)X(In2O3)1-X thin Films Prepared by Pulse Laser Deposition Technique. International Journal of Physics. 2017; 5(4):116-120. doi: 10.12691/ijp-5-4-3


In this work, fundamental wavelength (1064 nm) Q- switched Nd:YAG laser with 800 mJ peak energy on SnO2:In2O3 target to produce ITO thin films. Thin films characterized by UV-visible absorbance, DC conductivity, Hall effect measurements and X-ray diffraction. It was found that the transmission increase with increasing In2O3 ratio from 0 to 0.5 reaching about 88% in visible range. It can be seen that the conductivity increase with increasing ratio from 0 to 0.3 then decrease at 0.5 ratio. It can be found from Hall effect measurement that the mobility μH increase at 0.1 ratio then decrease with more In2O3 content.

ITO XRD DC conductivity UV-visible

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[1]  H. M. Zeyada, M. M. El-Nahass, I. K. El-Zawawi, and E. M. El-Menyawy, “Characterization of 2-(2,3-dihydro-1,5- dimethyl-3-oxo-2-phenyl-1H-pyrazol-4-ylimino)-2-(4-nitrophenyl) acetonitrile and ZnO nano-crystallite structure thin films for application in solar cells,” The European Physical Journal, vol. 49, p. 10301, (2010).
[2]  H. Kim, A. Piqu´e, J. S. Horwitz et al., “Indium tin oxide thin films for organic light-emitting devices,” Applied Physics Letters, vol. 74, no. 23, pp. 3444-3446, 1999.
[3]  D.G. Parker and P. G. Say, “Indium tin oxide/GaAs photodiodes for millimetric-wave applications,” Electronics Letters, vol. 22, no. 23, pp. 1266-1267, (1986).
[4]  Y. Huang, Z. Ji and C. Chen, “Preparation and characterization of p-type transparent conducting tingallium oxide films”, Applied Surface Science, 253, 4819-4822, (2007).
[5]  J. Li, H.Y. Yu, Y. Li, F. Wang, M. Yang, and S. M. Wong, “Low aspect-ratio hemispherical nanopit surface texturing for enhancing light absorption in crystalline Si thin film-based solar cells”, Applied Physics Letters, 98, 021905-021908, (2011) .
[6]  M. Stella, “Study of Organic Semiconductors for Device Applications,” University of Barcelona, 2009.
[7]  I. Elfallal, R. D. Rilkington, A. E. Hill. “Formation of a statistical thermodynamic model for the electron concentration in heavily doped metal oxide semiconductors applied to the tin-doped indium oxide system”, Thin solid films v223, n2, p303-310, Feb. 1993.
[8]  H. Hosono, D.C. Paine, Handbook of Transparent Conductors, Springer, New York Heidelberg Dordrecht London, (2010).
[9]  W. H. Bragg and W. L. Bragg, X Rays and Crystal Structure. London: G. Bell and Sons, LTD., 1918.
[10]  P. Yang, The Chemistry of Nano Structured Materials. Printed in Singapore: World Scientific Publishing Co. Pte. Ltd., p. 362, 2003.
[11]  Hestrezeski, D. Thin solid films, Vol. 182, p 1, (1989).