Optical and Electrical Properties of (SnO₂)_X(In₂O₃)_1-X thin Films Prepared by Pulse Laser Deposition Technique

Kadhem A. Aadim¹, Abdulmajeed E. Ibrahim² and Qutaibah A. Abduljabbar^2,

¹Department of Physics, University of Baghdad / College of Sciences

²Department of Physics, University of Tikrit/College of Education

Cite this paper:
Kadhem A. Aadim, Abdulmajeed E. Ibrahim and Qutaibah A. Abduljabbar. Optical and Electrical Properties of (SnO₂)_X(In₂O₃)_1-X thin Films Prepared by Pulse Laser Deposition Technique. International Journal of Physics. 2017; 5(4):116-120. doi: 10.12691/ijp-5-4-3

Abstract

In this work, fundamental wavelength (1064 nm) Q- switched Nd:YAG laser with 800 mJ peak energy on SnO₂:In₂O₃ target to produce ITO thin films. Thin films characterized by UV-visible absorbance, DC conductivity, Hall effect measurements and X-ray diffraction. It was found that the transmission increase with increasing In₂O₃ ratio from 0 to 0.5 reaching about 88% in visible range. It can be seen that the conductivity increase with increasing ratio from 0 to 0.3 then decrease at 0.5 ratio. It can be found from Hall effect measurement that the mobility μ_H increase at 0.1 ratio then decrease with more In₂O₃ content.

Keywords:
ITO XRD DC conductivity UV-visible

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