International Journal of Physics
ISSN (Print): 2333-4568 ISSN (Online): 2333-4576 Website: Editor-in-chief: B.D. Indu
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International Journal of Physics. 2017, 5(4), 110-115
DOI: 10.12691/ijp-5-4-2
Open AccessArticle

Annealing Effect on (SnO2)0.3:(In2O3)0.7 Solar Cell Prepared by PLD Technique

Abdulmajeed E. Ibrahim1, Kadhem A. Aadim2 and Qutaibah A. Abduljabbar1,

1Department of Physics, University of Tikrit/College of Education

2Department of Physics, University of Baghdad / College of Sciences

Pub. Date: June 15, 2017

Cite this paper:
Abdulmajeed E. Ibrahim, Kadhem A. Aadim and Qutaibah A. Abduljabbar. Annealing Effect on (SnO2)0.3:(In2O3)0.7 Solar Cell Prepared by PLD Technique. International Journal of Physics. 2017; 5(4):110-115. doi: 10.12691/ijp-5-4-2


Indium tin oxide (ITO) thin films were produced by Q- switched Nd:YAG laser with wavelength (1064 nm) has 800 mJ peak energy on In2O3 :SnO2 target with 0.3 ratio on p-type Si and on porous Si to fabricated solar cell. The as deposited and annealed thin films on glass substrates were characterized by X-ray diffraction Atomic force microscopy (AFM), UV-visible absorbance and Hall effect measurements. Then the fabricated solar cells examined in the dark and under illumination for SnO2:In2O3 /p-Si and SnO2:In2O3/Psi/p-Si annealed and as deposited samples.

solar cell pulse laser porous-Si

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