International Journal of Physics
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International Journal of Physics. 2015, 3(1), 1-7
DOI: 10.12691/ijp-3-1-1
Open AccessArticle

The Effect of Gamma Irradiation on the Structural Properties of Porous Silicon

Ismail Khalaf Abbas1, Laith Ahmed Najam1, and Abd UlKahliq AuobSulaiman1

1Department of Physics, College Of Science, Mosul University, Mosul, IRAQ

Pub. Date: January 03, 2015

Cite this paper:
Ismail Khalaf Abbas, Laith Ahmed Najam and Abd UlKahliq AuobSulaiman. The Effect of Gamma Irradiation on the Structural Properties of Porous Silicon. International Journal of Physics. 2015; 3(1):1-7. doi: 10.12691/ijp-3-1-1


Porous silicon layers (PSi) were prepared from p-type silicon wafer by using electrochemical cell with etching time 20 min, current 30 mA and fixed electrolyte solution HF:C2H5OH (1:4). The effect of increase of γ-ray intensity (50Gy and 100Gy) on the structural properties of porous silicon has been studied using SEM, AFM, XRD and Raman spectrum. The SEM images before irradiation shows high density and randomly distributed of pores that cover all of the surface which have different size and spherical shape. After irradiation by 50Gy, the pores seems more obvious, discriminate and larger diameters. The initial elementary pores on the PSi surface decrease with the increasing of radiation intensity to 100Gy, as a result of formation of new pores with in the initial layer of Psi. The AFM images show that the roughness of the samples increase with irradiation. XRD spectrum before irradiation did not show clearly any featured peaks while the spectra after irradiation show the presence of different peaks but the most important distinctive was <111> peaks at ( 2θ = 28.12) which give indication that the structure is cubic. An extremely symmetric band shape were recognized from Raman spectra of the samples after and before irradiation.

porous silicon gama radiation photoluminescence SEM of PSi XRD of PSi AFM of PSi

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[1]  Ma., Concepc, N., Arenas, Marina Vega, OmarMartnez and Oscar H. Salinas, (2011), “Nanocrystalline Porous Silicon: Structural, Optical, Electrical and Photovoltaic Properties crystalline properties and uses", prof. Sukumar, Bash (Ed), ISBN:251, intecech.
[2]  N., Naderi, M.R., Hashim, (2012), “Effect of Surface Morphology on Electrical Properties of Electrochemically-Etched Porous Silicon Photodetectors ", Int. J. Electrochem. Sci., 7, p.11512-11518.
[3]  KasraBehzad, Wan Mahmood Mat Yunus, ZainalAbidinTalib, AzmiZakaria and AfarinBahrami, (2013), "Effect of Preparation Parameters on Physical, Thermal and Optical Properties of n-type Porous Silicon ", Int. J. Electrochem. Sci., 7, p.8266-8275.
[4]  Hasan, H. H.,(2013), "study of characteristics of porous silicon by electrochemical etching ", Eng. and Tech. Journal, Vol.31, No.1.
[5]  N., Jeyakumaran, B., Natarajan, S., Ramamurthy and V., Vasu, (2007), "Structural and optical properties of n- type porous silicon– effect of etching time", IJNN, Vol.3, No.1.
[6]  Ma, S.Y., Zhang, B.R. and Qin, G.G., (1997), "Effects Of Y-Ray Irradiation On Photoluminescence Spectra From S & Rich Silicon Oxide", Materials Research Bulletin, Vol.32, No.10, p.1427-1433.
[7]  Bisi, O., Ossicini, S., Pavesi, L., (2000), "porous silicon: a quantum sponge structure for silicon based optoelectronics, surface science", reports 38, p. 1-126.
[8]  Khaldun, A., Salman, Z., Hassan, Khalid Omar, (2012), “Effect of Silicon Porosity on Solar Cell Efficiency", Int. J. Electrochem. Sci., p.7 376-386.
[9]  Klug, H. P., (1954), "crystallite size and lattice strains, in X-ray diffraction procedures", Newyork:wiley – intersience: kluge H.P. and Alex and er. L.E., p. 656-657.
[10]  Mingyuan, Ge, JiepenRony, Xin Fang, Any Zhang yunhao Luand Choywu, Zhou, (2013), "Scalable preparation of porous silicon nanoparticles and their application for Lithium ion battery anodes", Nano Res., 6 (3), p. 174-181.
[11]  Paillard, V., Puech, P., Laguna, M.A., Carkes, R.,Kohn, B. Huisken, F., (1999), "improved one phonon confinement model for an accurate size determination of silicon nanocrystal", J.Appl.Phys. Vol.86, No.4, p.1921-1924.
[12]  Beeman, D., Tsur., Thorpe, MF, (1985), "structural information from the Raman spectrum of amorphous silicon", phys. Review, B., Vol.32, p.874-878.
[13]  Sui, Z., Leong, PP., Herman, IP., (1992), "raman analyses of light emitting porous silicon", Applied Phys. Lett., Vol.60, p.2086-2088.
[14]  He, y., Yin, Cy., Cheng, G., Wang, L., Liu, X., Hu, Gy., (1994), "the structures and properties of nano sized crystalline silicon films", J. Appl., Phys., Vol.75, p.797-803.