American Journal of Materials Science and Engineering
ISSN (Print): 2333-4665 ISSN (Online): 2333-4673 Website: http://www.sciepub.com/journal/ajmse Editor-in-chief: Dr. SRINIVASA VENKATESHAPPA CHIKKOL
Open Access
Journal Browser
Go
American Journal of Materials Science and Engineering. 2014, 2(2), 13-17
DOI: 10.12691/ajmse-2-2-1
Open AccessArticle

Structural and Optical Properties of Different Composition of Se90Cd10-xInx thin Films by Vacuum Evaporation Technique

D.K. Dwivedi1, , Nitesh Shukla1, H.P. Pathak1 and Kedar Singh2

1Amorphous Semiconductor Research Lab, Department of Physics, Madan Mohan Malaviya University of Technology, Gorakhpur

2Department of Physics, Banaras Hindu University, Varanasi

Pub. Date: April 27, 2014

Cite this paper:
D.K. Dwivedi, Nitesh Shukla, H.P. Pathak and Kedar Singh. Structural and Optical Properties of Different Composition of Se90Cd10-xInx thin Films by Vacuum Evaporation Technique. American Journal of Materials Science and Engineering. 2014; 2(2):13-17. doi: 10.12691/ajmse-2-2-1

Abstract

Se90Cd10-xInx (x=2,4,6 &8) thin films have been deposited onto a chemically cleaned glass substrate by thermal evaporation technique under vacuum. The effects of different doping concentration of In have been investigated X-ray diffraction technique has been employed to investigate the structural characterization of the films. X-ray diffraction measurement indicates that the Se90Cd10-xInx films possess polycrystalline structure. Absorption spectra measured at normal incidence in the wavelength range 400-1100 nm have been analyzed for the optical characterization of the thin films under consideration. The optical constants (absorption coefficient (α), extinction coefficient (k)) and optical band gap Eg have been calculated. The absorption coefficient (α) is found to increase with photon energy. It has been found that extinction coefficient (K) decreases with increase in wavelength (λ). Optical band gap (Eg) has also been evaluated for the Se90Cd10-xInx thin films with different compositions. It has been found that optical band gap (Eg) increases with In incorporation in Se90Cd10-xInx alloys.

Keywords:
Chalcogenide glasses amorphous semiconductors thin films optical properties optical band gap

Creative CommonsThis work is licensed under a Creative Commons Attribution 4.0 International License. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

References:

[1]  Mahalingam, T., Kathalingam, A., Velumani, S., Soonil Lee, Kyeung Seek Lew and Yong Deak Kim, “Characterization of electrodeposited Zn1−xHgxSe thin films”,Semicond. Sci. Technol., 20, 749-754, 2005.
 
[2]  Tenne, Reshef, Mirovsky, Yehudith, Greenstein, Yaàcov and Giriat W., “Ternary Chalcogenide-Based Photoelectrochemical Cells: VII. Analysis of the Chemical Processes Occurring at the Surface during Photoelectrochemical Operation”, J. Electrochem. Soc, 132, 1829-1835, 1985.
 
[3]  Choe, Sung-Hyu, Park, Bok-Nam, Xi-Yu-Su, Oh, Se- Jung, Park, Hong- Lee and Kim, Wha-Tek, “Optical properties of undoped and Co-DOPED CdIn2Se4 single crystals”, J. Phys. Chem. Solids, 56, 89-92, 1995.
 
[4]  Mahapatra, P.K. and Dubey, A.R., “Photo electrochemical behaviour of mixed polycrystalline n-type CdS-CdSe electrodes”, Sol. Energy Mater. Sol. Cells, 32(1), 29-35, 1994.
 
[5]  Masumdar, E.U., Gaikwad, V.B., Pujari, V.B., More, P.D. and Deshmukh, L.P., “Some studies on chemically synthesized antimony-doped CdSe thin films”, Mater. Chem. Phys., 77 (3), 669-676, 2003.
 
[6]  Shahane, G.S. and Deshmukh, L.P., “Structural and electrical transport properties of CdS0.9Se0.1:in thin films: effect of film thickness”, Mater. Chem. Phys., 70 (1), 112-116, 2001.
 
[7]  Hankare, P.P., Bhuse, V.M., Garadkar, K.M., Delekar, S.D. and Mulla, I.S., “Chemical deposition of cubic CdSe and HgSe thin films and their characterization”, Semicond. Sci. Technol., 19(1), 70-75, 2004.
 
[8]  Murali, K.R., Swaminathan, V. and Trivedi, D.C., “Characteristics of nanocrystalline CdSe films”, Sol. Energy Mater. Sol. Cells, 81 (1), 113-118, 2004.
 
[9]  Choi, J.Y., Kim, K.J., Yoo, J.B. and Kim, D., “Properties of cadmium sulfide thin films deposited by chemical bath deposition with ultrasonication”, Solar Energy, 64(1-3), 41-47, 1998.
 
[10]  O’Brien, P. and McAleese, J., “Developing an understanding of the processes controlling the chemical bath deposition of ZnS and CdS”, J. Mater. Chem., 8, 2309-2314, 1998.
 
[11]  Tanaka, K., “Structural phase transitions in Chalcogenide glasses”, Phys. Rev. B, 39, 1270-1279, 1989.
 
[12]  Shimizu, A., “Data Detection using Pattern Recognition for Multi-level Optical Recording”, Technical Digest of ISOM 2001, 300-301, 2001.
 
[13]  Akiyama, T., Uno, M., Kituara, H., Narumi, K., Nishiuchi, K. and Amada, N., “Rewritable Dual-Layer Phase-Change Optical Disk Utilizing a Blue-Violet Laser”, Jpn J. appl. Phys., 40, 1598-1603, 2001.
 
[14]  Ohta, T., “Phase-change optical memory promotes the DVD optical disk”, J. Optoelectron. Adv. Mater., 3, 609-626, 2001.
 
[15]  Harbold, J.M., Hilday, F.O., Wise, F.W. and Itkain, B.G., “Highly nonlinear Ge-As-Se and Ge-As-S-Se glasses for all-optical switching”, IEEE Photonics Technology Letters, 14(6), 822-824, 2002.
 
[16]  Shimakawa, K., “Residual photocurrent decay in amorphous Chalcogenides”, J Non-Cryst Solids, 77-78, Part 2, 1253-1256, 1985.
 
[17]  Shim, Jae Yeob, Park, Sang Wook and Baik, Hong Koo, “Silicide formation in cobalt/amorphous silicon, amorphous Co_Si and bias-induced Co_Si films”, Thin Solid Films, 292 (1-2), 31-39, 1997.
 
[18]  Saiter, J.M, Ledru, J., Hamou, A. and Saffarini, G., “Crystallization of AsxSe1−x from the glassy state (0.005<x<0.03)”, Physica B: Condensed Matter, 245(3), 256-262, 1998.
 
[19]  Zhou, W., Tang, D., Pan,A., Zhang, Q., Zhang, Q., Wan, Q. and Zou, B., J. Phys. Chem. C, 115, 1415, 2011.
 
[20]  Nikale, V.M. and Bhoseale, C.H., “Properties of spray deposited CdIn2Se4 thin films for photovoltaic applications”, Solar Energy Materials & Solar Cells, 82, 3-10, 2004.
 
[21]  Mahalingam, T., Thanikaikarasan, S., Chandramohan, R.,Kihyun Chung, Chu, J.P., Velumani, S. and Rhee, Jin-koo, “Electrosynthesis and studies on Cadmium-Indium-Selenide thin films”, Materials Science and Engineering B, 174, 236-241, 2010.
 
[22]  Sharma, Kriti, Al- Kabbi, Allaa S., Saini, G.S.S. and Tripathi S.K.,“Indium doping induced modification of the structural,optical and electrical properties of nanocrystalline CdSe thin films”, Journal of Alloys and Compounds, 564, 42-48, 2013.
 
[23]  Fornarini, L., Strippe, F., Chardarelli, E. and Scrosati, B., “Photoelectrochemical behaviour of n-type CdIn2Se4 semiconductor electrodes in polysulphide electrolytes” Solar Cells, 11, 389-400, 1984.
 
[24]  Tokiezier, M., Siripala, W. and Tenne, R., “Electrolyte Electroreflectance of Single-Crystal CdIn2Se4 in a Photoelectrochemical Solar Cell”, J. Electrochem. Soc., 131(4), 736-740, 1984.
 
[25]  Lade,S.J., Uplane, M.D., Uplane, M.M. and Lokhande, C.D., “Structural, optical and photoelectrochemical properties of electrodeposited CdSe thin films”, J.Mater.Sci.Mater.Electron. 9, 477-482, 1998.
 
[26]  Tenne, R.,Mirovsky, Y.,Greenstein, Y. and Chen, D., “Ternary chalcogenide Based- Photoelecrochemical cell:II. The nCdIn2Se4/Aqueous Polysulfide system” J.Electrochem. Soc., 129, 1506-1512, 1982.
 
[27]  Dwivedi, D.K., Pathak, H.P., Shukla, R.K. and Kumar, A., “Structural and Optical Investigations of Amorphous Se75-xTe25Sbx thin films”, American Journal of Materials Science and Engineering, 1(3), 46-49, 2013.
 
[28]  Dwivedi, D.K., Pathak, H.P., Shukla, Nitesh and Kumar, A., “Effect of thermal annealing on structure and optical band gap of amorphous Se75-xTe25Sbx thin films by vacuum evaporation technique”, Journal of Ovonic Research, 10(1), 15-22, 2014.
 
[29]  Tenne, R., Mirovsky, Y., Sawatzky, G. and Giriat, W., “Ternary Chalcogenide‐Based Photoelectrochemical Cells: VII. Analysis of the Chemical Processes Occurring at the CdIn2Se4 Surface during Photoelectrochemical Operation”, J.Electrochem.Soc., 132, 1829-1835, 1985.
 
[30]  Marinelli, M., Pascale, T.M.De, Meloni, F., Mula, G., Serra, M. and Baroni, S. “Theoretical study of cubic versus tetragonal structures of defect zinc-blende semiconductors: CdIn2Se4”, Physical Review B, 40(3), 1725-1735, 1989.
 
[31]  Kerimova, T.G., Mekhtiev, N.M., Adzhalova, F.R., Guseinov, Z.Z. and Salaev, E.Yu., Sov. Phys. Semicond., 17, 740, 1983.
 
[32]  Chopra, K.L. and Das, S.R., Thin Film Solar Cells, Plenum Press, New York, 1983.
 
[33]  Cachet, H., Cortes, R., Froment, M. and Etcheberry, A., “Electrodeposition of epitaxial CdSe on (1 1 1) gallium arsenide”, Thin Solid Films, 84, 361-362, 2000.
 
[34]  Rouleau, C.M. and Lowndes, D.H., “Growth of p-type ZnTe and n-type CdSe films on GaAs(0 0 1) by pulsed laser ablation”, Appl. Surf. Sci., 418, 127-129, 1998.
 
[35]  Ohishi, M., Yoneta, M., Saito, H., Sawada, H. and Mori, S., “Molecular beam epitaxy of wurtzite CdSe on GaAs{1 1 1}substrates”, J. Cryst. Growth,184–185, 57–61, 1998.
 
[36]  Singh, Abhay kumar, Mehta, Neeraj and Singh, Kedar “Optical and FTIR properties of Se93-xZn2Te5Inx chalcogenide glasses” Physica B, 404, 3470-3474, 2009.
 
[37]  Ali, Mazhar, A.A.syed, Waqar, Zubair, M., Shah, Nazar A. and Mehmood, Arshad, “Physical properties of Sb-doped CdSe thin films by thermal evaporation method”, Applied Surface Science, 284, 482-488, 2013.
 
[38]  Abkowitz, M., “Relaxation induced changes in electrical behavior of glassy chalcogenide semiconductors”, Polymer Eng.Sci., 24(14), 1149-1154, 1984.
 
[39]  Ahamed Basheer, M.G. Syed, Rajni, K.S., Vidhya, V.S., Swaminathan, V., Thayumanavan, A., Murali, K.R. and Jayachandran, M., “Structural, optical, electrical and luminescence properties of electron beam evaporated CdSe:In films”, Cryst. Res. Technol., 46(3), 261-266, 2011.
 
[40]  Sharma, K., Al-Kabbi, A.S., Saini, G.S.S. and Tripathi, S.K., “Determination of dispersive optical constants of nanocrystalline CdSe (nc-CdSe) thin films”, Mater. Res. Bull., 47(6), 1400-1406, 2012.
 
[41]  Yadav, A.A. and Masumdar, E.U., “Preparation and characterization of indium doped CdS0.2Se0.8 thin films by spray pyrolysis”, Mater. Res. Bull., 45(10) 1455-1459, 2010.
 
[42]  Gosain, D. P., Shimizu, T., Ohmura, M., Suzuki, M., Bando T., “Some properties of Sb2Te3−xSex for nonvolatile memory based on phase transition”, J. Mater Science, 26(12), 3271-3274, 1991.
 
[43]  Oe, K., Toyoshiman, Y., and Nagai, H., “A reversible optical transition in Se-Ge and P-Se-Ge glasses”, J. Non-Cryst Solids, 20(3), 405-411, 1976.
 
[44]  Keller, H. and Stuke, J., “Elektrische und optische Eigenschaften von amorphem Tellur”, J. Phys Stat Sol, 8(3), 831-840,1965.
 
[45]  Igo, T. and Toyoshima, Y., “A reversible optical change in the As-Se-Ge glass” J. Non-Cryst Solids, 11(4), 304-308, 1973.
 
[46]  Gravesteijn, Dirk J., “Materials developments for write-once and erasable phase-change optical recording”, Appl Opt, 27(4), 736-738, 1988.
 
[47]  Khan, Shamshad A, Zulfequar, M. and Husain, M., “Effects of annealing on crystallization process in amorphous Ge5Se95−xTex thin films” Physica B, 324 336-343, 2002.
 
[48]  Al-Ghamdi, A A, “Optical band gap and optical constants in amorphous” Se96−xTe4Agx thin films”, Vacuum, 80(5), 400-405, 2006.
 
[49]  Al-Agel, F.A., Al-Arfaj, E.A., Al-Marzouki, F.M., Khan, Shamshad A. and Al-Ghamdi, A.A., “Study of phase separation in Ga25Se75−xTex chalcogenide thin films” Progress in Natural science: Materials International, 23(2), 139-144, 2013.
 
[50]  Khan, Zishan H., Salah, Numan, Habib, Sami, Al-Ghamdi, A.A. and Khan, Shamshad A., “Electrical and optical properties of a-SexTe100–x thin films”, Optics & Laser Tech., 44(1) 6-11, 2012.
 
[51]  Ghosh, P.K., Jana, S., Nandy, S. and Chattopadhay, K.K., “Size-dependent optical and dielectric properties of nanocrystalline ZnS thin films synthesized via rf-magnetron sputtering technique,” Mater. Res. Bull., 42(3), 505-514, 200.