American Journal of Energy Research
ISSN (Print): 2328-7349 ISSN (Online): 2328-7330 Website: http://www.sciepub.com/journal/ajer Editor-in-chief: Apply for this position
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American Journal of Energy Research. 2018, 6(1), 30-34
DOI: 10.12691/ajer-6-1-5
Open AccessArticle

Influence of the Doping Rate of the CIGSe Layer on the Recombination-generation Mechanisms with 25 nm Incorporation of a KF Layer on a CIGSe Solar Cell

Djimba Niane1, , Alain K. Ehemba1, Salif Cissé1, Ousmane Diagne1 and Moustapha Dieng1

1Physics Department, Faculty of Science and Technology, Laboratory of Semiconductors and Solar Energy, University Cheikh Anta Diop, Dakar

Pub. Date: July 19, 2018

Cite this paper:
Djimba Niane, Alain K. Ehemba, Salif Cissé, Ousmane Diagne and Moustapha Dieng. Influence of the Doping Rate of the CIGSe Layer on the Recombination-generation Mechanisms with 25 nm Incorporation of a KF Layer on a CIGSe Solar Cell. American Journal of Energy Research. 2018; 6(1):30-34. doi: 10.12691/ajer-6-1-5

Abstract

In this work, we studied the influence of the doping rate of the CIGSe layer on the recombination-generation mechanisms with 25 nm incorporation of a KF layer on a CIGSe solar cell. The different doping taken are Nb=1015cm-3, Nb=1016cm-3 et Nb=1017cm-3. Numerical modeling with the SCAPS-1D software shows that the generation rate varies slightly while that of recombination is very important, explained by a strong presence of traps in the CIGSe bandgap.

Keywords:
Solar cells CIGSe KF Doping Generation Recombination SCAPS-1D

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