American Journal of Electrical and Electronic Engineering
ISSN (Print): 2328-7365 ISSN (Online): 2328-7357 Website: http://www.sciepub.com/journal/ajeee Editor-in-chief: Naima kaabouch
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American Journal of Electrical and Electronic Engineering. 2013, 1(3), 37-41
DOI: 10.12691/ajeee-1-3-1
Open AccessArticle

1 GHz CMOS Band-pass Filter Design Using an Active Inductor and Capacitor

Siavash Heydarzadeh1, and Pooya Torkzadeh1

1Department of Electrical Engineering, Science and Research Branch, Islamic Azad University, Tehran, Iran

Pub. Date: June 30, 2013

Cite this paper:
Siavash Heydarzadeh and Pooya Torkzadeh. 1 GHz CMOS Band-pass Filter Design Using an Active Inductor and Capacitor. American Journal of Electrical and Electronic Engineering. 2013; 1(3):37-41. doi: 10.12691/ajeee-1-3-1

Abstract

This work offers the use of an active inductor and capacitor to build RF band-pass filter with 0.18μm and TSMC process. Based on the proposed structure, a prototype 1 GHz active filter designed and simulated in a 0.18μm CMOS technology. Simulation results for the designed RF band-pass filter show S21 > 19dB and consuming power less than 14 mW from 1.8 V supply voltage. The absolute values of reflection parameters (|S11| and |S22|) are about 60 dB. Low-bandwidth linear noise at output node are less than -170 dB and Advanced Design System (ADS) used to produce 1 GHz band-pass active filter simulation results.

Keywords:
active filter active inductance active capacitance 0.18 μm CMOS technology ADS

Creative CommonsThis work is licensed under a Creative Commons Attribution 4.0 International License. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

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